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| Preliminary data BSP 92 P SIPMOS Small-Signal-Transistor Feature * P-Channel * Enhancement mode * Logic Level * dv/dt rated Product Summary VDS RDS(on) ID -250 12 -0.26 SOT-223 Drain pin 2/4 Gate pin1 Source pin 3 2 1 VPS05163 V A 4 3 Type BSP 92 P Package SOT-223 Ordering Code Q67042-S4169 Tape and Reel Information - Marking BSP92P Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TA=25C TA=70C Symbol ID Value -0.26 -0.23 Unit A Pulsed drain current TA=25C ID puls dv/dt VGS Ptot Tj , Tstg -1.04 6 20 1.8 -55... +150 55/150/56 kV/s V W C Reverse diode dv/dt IS =-0.26A, VDS =-200V, di/dt=-200A/s, Tjmax =150C Gate source voltage Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-07-25 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) BSP 92 P Symbol min. RthJS RthJA - Values typ. 15 max. 25 Unit K/W 80 48 115 70 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=-250A Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) RDS(on) -250 -1 Values typ. -1.5 max. -2 Unit V Gate threshold voltage, VGS = VDS ID =-130A Zero gate voltage drain current VDS =-250V, VGS =0, Tj =25C VDS =-250V, VGS =0, Tj =150C A -0.1 -10 -10 10 8.2 7.5 -0.2 -100 -100 20 15 12 nA Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-2.8V, ID =-0.025A Drain-source on-state resistance VGS =-4.5V, ID =-0.23A Drain-source on-state resistance VGS =-10V, ID =-0.26A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-07-25 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0, IF=-0.26A VR =-125V, IF =lS , diF /dt=100A/s BSP 92 P Symbol Conditions min. Values typ. 0.57 83 13 6 5 6 67 33 max. 104 16 8 8 9 101 50 Unit gfs Ciss Coss Crss td(on) tr td(off) tf |VDS|2*|ID |*RDS(on)max , ID =-0.23A VGS =0, VDS =-25V, f=1MHz 0.29 - S pF VDD =-125V, VGS =-10V, ID =-0.26A, RG=6 ns Qgs Qgd Qg VDD =-200V, ID=-0.26A - -0.1 -1.9 -4.3 -2.9 -0.13 nC -2.4 -5.4 -3.6 V VDD =-200V, ID=-0.26A, VGS =0 to -10V V(plateau) VDD =-200V, ID=-0.26A IS TA=25C - -0.83 51 76 -0.26 A -1.04 -1.21 V 64 95 ns nC Page 3 2002-07-25 Preliminary data 1 Power dissipation Ptot = f (TA ) 1.9 BSP 92 P BSP 92 P 2 Drain current ID = f (TA ) parameter: |VGS | 10V BSP 92 P -0.28 W 1.6 1.4 A -0.24 -0.22 -0.2 Ptot ID 20 40 60 80 100 120 1.2 1 0.8 0.6 0.4 0.2 -0.18 -0.16 -0.14 -0.12 -0.1 -0.08 -0.06 -0.04 -0.02 0 0 C 160 0 0 20 40 60 80 100 120 C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25C -10 1 BSP 92 P 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 2 BSP 92 P A K/W -10 0 tp = 110.0s 10 1 1 ms /I D -10 -1 DS ( DS 10 ms Z thJA 10 0 D = 0.50 0.20 single pulse 0.10 0.05 0.02 0.01 10 -1 3 ID -10 -2 DC -10 -3 -1 -10 R on ) = V -10 0 -10 1 -10 2 V -10 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS Page 4 tp 2002-07-25 Preliminary data 5 Typ. output characteristic ID = f (VDS ) parameter: Tj =25C, -VGS 1 BSP 92 P 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS ; Tj =25C, -VGS 18 A 0.8 0.7 0.6 0.5 0.4 10V 6V 5V 4.6V 4.2V 3.6V 3.4V 3.2V 2.8V 2.6V 14 2.6V 2.8V 3.2V RDSON -I D 12 10 8 6 0.3 0.2 0.1 0 0 4 2 0 0 10V 6V 5V 4.6V 4.2V 3.6V 3.4V 1 2 3 4 5 6 7 8 V 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -VDS A -ID 1 7 Typ. transfer characteristics ID= f ( VGS ); |VDS | 2 x |ID | x RDS(on)max parameter: Tj = 25 C 1 8 Typ. forward transconductance gfs = f(ID) parameter: Tj =25C 1 A S -I D 0.6 g fs V 0.6 0.4 0.4 0.2 0.2 0 0 1 2 4 0 0 0.2 0.4 0.6 A 1 -VGS Page 5 -ID 2002-07-25 Preliminary data 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = -0.26 A, VGS = -10 V 32 BSP 92 P BSP 92 P 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS ; ID = -130A 2.2 V 98% RDS(on) 24 - VGS(th) 1.8 1.6 typ. 20 1.4 16 98% 12 1 8 typ 0.8 0.6 0.4 -60 2% 1.2 4 0 -60 -20 20 60 100 C 180 -20 20 60 100 C 160 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 C 10 3 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj -10 1 BSP 92 P pF A Ciss 10 2 -10 0 C Coss 10 1 -10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 -10 -2 0 Crss IF 6 12 18 24 V 36 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 -VDS Page 6 VSD 2002-07-25 Preliminary data 13 Typ. gate charge VGS = f (QGate ) parameter: ID = -0.26 A pulsed -16 V BSP 92 P BSP 92 P BSP 92 P 14 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -300 V -12 V(BR)DSS 50% nC -285 -280 -275 -270 -265 -260 -255 -250 VGS -10 -8 20% -6 80% -4 -245 -240 -2 -235 -230 0 0 1 2 3 4 5 6.5 -225 -60 -20 20 60 100 C 180 |Q G| Tj Page 7 2002-07-25 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSP 92 P Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-07-25 |
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